MOSFET N/P-CH 20V SOT-563
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563
Complementary Small Signal MOSFET with ESD protection 20V
Dual N/P-Channel MOSFET, 20V, 430mA, SOT-563 Product overview: NTZD3155CT2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 20V, 430mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 430mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD3155CT2G can be used for catalog matching and distributor lookup.
Manufacturer: ON Semiconductor
Win Source Part Number: 025844-NTZD3155CT2G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTZD3155C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 540mA, 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 150pF @ 16V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Alternative Parts (Cross-Reference): DMG1016V-7; DMG1016V; CMLDM3757 TR Lead Free;
Introduction Date: July 08, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
DUAL N/P CH MOSFET, 20V, SOT-563; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 20V, SOT-563, FULL REEL; Transistor Polarity:Complementa
MOSFET, N & P-CH, 20V, 0.54A, SOT-563; Transistor Polarity:N and P Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; PowerRoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF MOSFET Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTZD3155CT2G | NTZD3155CT2GOSDKR-ND | NTZD3155CT2G | 289-NTZD3155CT2G | 025844-NTZD3155CT2G | 08R4038 | 02M9902 | NTZD3155CT2G |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | P-Channel Dual 20V 430mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT2G | Dual N/p Ch Mosfet, 20V, Sot-563; Transistor Polarity Onsemi | Dual N/p Channel Mosfet, 20V, Sot-563, Full Reel; Transistor Polarity Onsemi | MOSFET | |
| Polarity | P-Channel; N and P-Channel | P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 20 volts | 20 volts | ||||||
| IDSS | 540 milliamps | 540 milliamps | 540 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
