onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT1H NTZD3155CT1H

Manufacturer: ON Semiconductor
Win Source Part Number: 060711-NTZD3155CT1H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 540mA, 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 150pF @ 16V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

540mA, 20V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 463A, 6 PIN Product overview: NTZD3155CT1H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 540mA, 20V, 463A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 540mA, 20V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD3155CT1H can be used for catalog matching and distributor lookup.