onsemi FET, MOSFET Arrays NTZD3155CT1G

Description
MOSFET N/P-CH 20V SOT-563
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Description
MOSFET N/P-CH 20V SOT-563
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Datasheet
Datasheet Summary
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The NTZD3155C is a small signal MOSFET featuring complementary N and P channel configurations, with a maximum drain-to-source voltage of 20V and continuous drain currents of 540mA for the N-channel and -430mA for the P-channel. It is housed in a compact SOT-563 package, measuring 1.6 x 1.6 mm. The device utilizes leading trench technology to achieve low on-resistance values, with typical RDS(on) of 0.4 ohms at a gate-source voltage of 4.5V for the N-channel and 0.5 ohms for the P-channel at -4.5V. This MOSFET is designed for applications such as DC-DC conversion circuits, load switching, and high-speed circuits, making it suitable for use in battery-operated systems like cell phones and digital cameras. It also features ESD protection and is compliant with RoHS standards, ensuring it meets environmental regulations. The operating temperature range is from -55¬8C to 150¬8C, with a power dissipation rating of 250mW at 25¬8C. Engineers considering this component should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.

Datasheet Summary
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The NTZD3155C is a small signal MOSFET featuring complementary N and P channel configurations, with a maximum drain-to-source voltage of 20V and continuous drain currents of 540mA for the N-channel and -430mA for the P-channel. It is housed in a compact SOT-563 package, measuring 1.6 x 1.6 mm. The device utilizes leading trench technology to achieve low on-resistance values, with typical RDS(on) of 0.4 ohms at a gate-source voltage of 4.5V for the N-channel and 0.5 ohms for the P-channel at -4.5V. This MOSFET is designed for applications such as DC-DC conversion circuits, load switching, and high-speed circuits, making it suitable for use in battery-operated systems like cell phones and digital cameras. It also features ESD protection and is compliant with RoHS standards, ensuring it meets environmental regulations. The operating temperature range is from -55¬8C to 150¬8C, with a power dissipation rating of 250mW at 25¬8C. Engineers considering this component should evaluate its specifications against their project requirements, particularly in terms of voltage, current handling, and thermal performance.

Suppliers

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Product
Description
Supplier Links
FET, MOSFET Arrays - NTZD3155CT1G - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
NTZD3155CT1G
FET, MOSFET Arrays NTZD3155CT1G
MOSFET N/P-CH 20V SOT-563

MOSFET N/P-CH 20V SOT-563

Supplier's Site Datasheet
FET, MOSFET Arrays - NTZD3155CT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3155CT1GOSTR-ND
FET, MOSFET Arrays NTZD3155CT1GOSTR-ND
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - NTZD3155CT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3155CT1GOSCT-ND
FET, MOSFET Arrays NTZD3155CT1GOSCT-ND
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
FET, MOSFET Arrays - NTZD3155CT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3155CT1GOSDKR-ND
FET, MOSFET Arrays NTZD3155CT1GOSDKR-ND
Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Mosfet Array N and P-Channel 20V 540mA, 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT1G - 025843-NTZD3155CT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT1G
025843-NTZD3155CT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT1G 025843-NTZD3155CT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025843-NTZD3155CT1G Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: NTZD3155C Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 540mA, 430mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 2.5nC @ 4.5V Max Input Capacitance: 150pF @ 16V Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V Alternative Parts (Cross-Reference): DMG1016V-7; DMG1016V; CMLDM3757 TR Lead Free; Introduction Date: July 08, 2004 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 025843-NTZD3155CT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: NTZD3155C
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 540mA, 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 150pF @ 16V
Maximum Rds On at Id,Vgs: 550 mOhm @ 540mA, 4.5V
Alternative Parts (Cross-Reference): DMG1016V-7; DMG1016V; CMLDM3757 TR Lead Free;
Introduction Date: July 08, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
NTZD3155CT1G
Triode/MOS Tube/Transistor >> MOSFETs NTZD3155CT1G
20V 550mΩ@540mA,4.5V 250mW 1V@250uA 1PCSN-Channel&1PCSP- Channel SOT-563 MOSFETs ROHS

20V 550mΩ@540mA,4.5V 250mW 1V@250uA 1PCSN-Channel&1PCSP-Channel SOT-563 MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 20V 540mA/-430mA Complementary w/ESD

MOSFET 20V 540mA/-430mA Complementary w/ESD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZD3155CT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZD3155CT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZD3155CT1G
MOSFET N/P-CH 20V SOT563

MOSFET N/P-CH 20V SOT563

Supplier's Site
Dual N/p Channel Mosfet, 20V, Sot-563; Transistor Polarity Onsemi - 10N9592 - Newark, An Avnet Company
Chicago, IL, United States
Dual N/p Channel Mosfet, 20V, Sot-563; Transistor Polarity Onsemi
10N9592
Dual N/p Channel Mosfet, 20V, Sot-563; Transistor Polarity Onsemi 10N9592
DUAL N/P CHANNEL MOSFET, 20V, SOT-563; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:540mA; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

DUAL N/P CHANNEL MOSFET, 20V, SOT-563; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:540mA; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
Dual Mosfet, N And P Channel, 540 Ma, 20 V, 0.4 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi - 94T5893 - Newark, An Avnet Company
Chicago, IL, United States
Dual Mosfet, N And P Channel, 540 Ma, 20 V, 0.4 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi
94T5893
Dual Mosfet, N And P Channel, 540 Ma, 20 V, 0.4 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi 94T5893
Dual MOSFET, N and P Channel, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V RoHS Compliant: Yes

Dual MOSFET, N and P Channel, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N/p Channel, 20V, 0.54A, Sot-563-6; Transistor Polarity Onsemi - 45J2183 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N/p Channel, 20V, 0.54A, Sot-563-6; Transistor Polarity Onsemi
45J2183
Mosfet, N/p Channel, 20V, 0.54A, Sot-563-6; Transistor Polarity Onsemi 45J2183
MOSFET, N/P CHANNEL, 20V, 0.54A, SOT-563-6; Transistor Polarity:Complementa ry N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:540mA; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, N/P CHANNEL, 20V, 0.54A, SOT-563-6; Transistor Polarity:Complementary N and P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:540mA; On Resistance Rds(on):0.4ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTZD3155CT1G NTZD3155CT1GOSTR-ND 025843-NTZD3155CT1G NTZD3155CT1G NTZD3155CT1G NTZD3155CT1G 10N9592 94T5893
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3155CT1G Triode/MOS Tube/Transistor >> MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Dual N/p Channel Mosfet, 20V, Sot-563; Transistor Polarity Onsemi Dual Mosfet, N And P Channel, 540 Ma, 20 V, 0.4 Ohm, 4.5 V, 1 V Rohs Compliant Onsemi
Polarity P-Channel; N and P-Channel P-Channel N-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts 20 volts
IDSS 540 milliamps 540 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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