onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H NTZD3152PT1H

Description
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NTZD3152PT1H - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H - 1084048-NTZD3152PT1H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H
1084048-NTZD3152PT1H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H 1084048-NTZD3152PT1H
Manufacturer: ON Semiconductor Win Source Part Number: 1084048-NTZD3152PT1H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 430mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 2.5nC @ 4.5V Max Input Capacitance: 175pF @ 16V Maximum Rds On at Id,Vgs: 900 mOhm @ 430mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084048-NTZD3152PT1H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 175pF @ 16V
Maximum Rds On at Id,Vgs: 900 mOhm @ 430mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel Dual 430 mA 20 V MOSFET Transistor
289-NTZD3152PT1H
P-Channel Dual 430 mA 20 V MOSFET Transistor 289-NTZD3152PT1H
TRANSISTOR 430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 463A-01, 6 PIN, FET General Purpose Small Signal Product overview: NTZD3152PT1H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 430 mA, 20 V, 463A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 430 mA, 20 V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD3152PT1H can be used for catalog matching and distributor lookup.

TRANSISTOR 430 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 463A-01, 6 PIN, FET General Purpose Small Signal Product overview: NTZD3152PT1H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, 430 mA, 20 V, 463A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 430 mA, 20 V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTZD3152PT1H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - NTZD3152PT1H-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3152PT1H-ND
FET, MOSFET Arrays NTZD3152PT1H-ND
Mosfet Array 2 P-Channel (Dual) 20V 430mA 250mW Surface Mount SOT-563

Mosfet Array 2 P-Channel (Dual) 20V 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET PFET SOT563 20V 430MA TR

MOSFET PFET SOT563 20V 430MA TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZD3152PT1H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZD3152PT1H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZD3152PT1H
MOSFET 2P-CH 20V 0.43A SOT563

MOSFET 2P-CH 20V 0.43A SOT563

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTZD3152PT1H 1084048-NTZD3152PT1H 289-NTZD3152PT1H NTZD3152PT1H-ND NTZD3152PT1H NTZD3152PT1H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H P-Channel Dual 430 mA 20 V MOSFET Transistor FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel
Package Type FL6 SOT3; SOT-563-6 SOT-563, SOT-666
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
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