onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H NTZD3152PT1H

Description
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - NTZD3152PT1H - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Small Signal Field-Effect Transistor, 0.43A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H - 1084048-NTZD3152PT1H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H
1084048-NTZD3152PT1H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H 1084048-NTZD3152PT1H
Manufacturer: ON Semiconductor Win Source Part Number: 1084048-NTZD3152PT1H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-563-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 430mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 2.5nC @ 4.5V Max Input Capacitance: 175pF @ 16V Maximum Rds On at Id,Vgs: 900 mOhm @ 430mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084048-NTZD3152PT1H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-563-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 430mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.5nC @ 4.5V
Max Input Capacitance: 175pF @ 16V
Maximum Rds On at Id,Vgs: 900 mOhm @ 430mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - NTZD3152PT1H-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
NTZD3152PT1H-ND
FET, MOSFET Arrays NTZD3152PT1H-ND
Mosfet Array 2 P-Channel (Dual) 20V 430mA 250mW Surface Mount SOT-563

Mosfet Array 2 P-Channel (Dual) 20V 430mA 250mW Surface Mount SOT-563

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET PFET SOT563 20V 430MA TR

MOSFET PFET SOT563 20V 430MA TR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTZD3152PT1H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTZD3152PT1H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTZD3152PT1H
MOSFET 2P-CH 20V 0.43A SOT563

MOSFET 2P-CH 20V 0.43A SOT563

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTZD3152PT1H 1084048-NTZD3152PT1H NTZD3152PT1H-ND NTZD3152PT1H NTZD3152PT1H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTZD3152PT1H FET, MOSFET Arrays MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
Package Type FL6 SOT3; SOT-563-6 SOT-563, SOT-666
Packing Method Tape Reel; Tape & Reel Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
Unlock Full Specs
to access all available technical data