onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG NTTFS4C08NTAG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG - 1084040-NTTFS4C08NTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG
1084040-NTTFS4C08NTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG 1084040-NTTFS4C08NTAG
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084040-NTTFS4C08NTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.3A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18.2nC @ 10V
Max Input Capacitance: 1113pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
N-Channel 30V 52A MOSFET Transistor
278-NTTFS4C08NTAG
N-Channel 30V 52A MOSFET Transistor 278-NTTFS4C08NTAG
Single N-Channel Power MOSFET 30V, 52A, 5.9mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C08NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C08NTAG can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 30V, 52A, 5.9mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C08NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C08NTAG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSTR-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSTR-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSCT-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSCT-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSDKR-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSDKR-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTTFS4C08NTAG
Single FETs, MOSFETs NTTFS4C08NTAG
MOSFET N-CH 30V 9.3A 8WDFN

MOSFET N-CH 30V 9.3A 8WDFN

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH

MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTFS4C08NTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTFS4C08NTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTFS4C08NTAG
MOSFET N-CH 30V 9.3A 8WDFN

MOSFET N-CH 30V 9.3A 8WDFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1084040-NTTFS4C08NTAG 278-NTTFS4C08NTAG NTTFS4C08NTAGOSTR-ND NTTFS4C08NTAG NTTFS4C08NTAG NTTFS4C08NTAG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG N-Channel 30V 52A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 820 to 25500 milliwatts 820 milliwatts 820 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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