onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG NTTFS4C08NTAG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG - 1084040-NTTFS4C08NTAG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG
1084040-NTTFS4C08NTAG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG 1084040-NTTFS4C08NTAG
Manufacturer: ON Semiconductor Win Source Part Number: 1084040-NTTFS4C08NTA G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 820mW (Ta), 25.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-WDFN (3.3x3.3) Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 18.2nC @ 10V Max Input Capacitance: 1113pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084040-NTTFS4C08NTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.3A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18.2nC @ 10V
Max Input Capacitance: 1113pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
N-Channel 30V 52A MOSFET Transistor
278-NTTFS4C08NTAG
N-Channel 30V 52A MOSFET Transistor 278-NTTFS4C08NTAG
Single N-Channel Power MOSFET 30V, 52A, 5.9mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C08NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C08NTAG can be used for catalog matching and distributor lookup.

Single N-Channel Power MOSFET 30V, 52A, 5.9mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C08NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C08NTAG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSTR-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSTR-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSCT-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSCT-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS4C08NTAGOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTFS4C08NTAGOSDKR-ND
Single FETs, MOSFETs NTTFS4C08NTAGOSDKR-ND
N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH

MOSFET Pwr MOSFET 30V 52A 5.9mOhm SGL N-CH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTFS4C08NTAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTFS4C08NTAG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTFS4C08NTAG
MOSFET N-CH 30V 9.3A 8WDFN

MOSFET N-CH 30V 9.3A 8WDFN

Supplier's Site
Single FETs, MOSFETs - NTTFS4C08NTAG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTTFS4C08NTAG
Single FETs, MOSFETs NTTFS4C08NTAG
MOSFET N-CH 30V 9.3A 8WDFN

MOSFET N-CH 30V 9.3A 8WDFN

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1084040-NTTFS4C08NTAG 278-NTTFS4C08NTAG NTTFS4C08NTAGOSTR-ND NTTFS4C08NTAG NTTFS4C08NTAG NTTFS4C08NTAG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C08NTAG N-Channel 30V 52A MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 820 to 25500 milliwatts 820 milliwatts 820 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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