onsemi Single FETs, MOSFETs NTTFS4C08NTAG

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

N-Channel 30V 9.3A (Ta) 820mW (Ta), 25.5W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Single N-Channel Power MOSFET 30V, 52A, 5.9mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C08NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C08NTAG can be used for catalog matching and distributor lookup.

Manufacturer: ON Semiconductor
Win Source Part Number: 1084040-NTTFS4C08NTAG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 820mW (Ta), 25.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.3A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 18.2nC @ 10V
Max Input Capacitance: 1113pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance