Single N-Channel Power MOSFET 30V, 65A, 4.2mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C06NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C06NTAG can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 11A/67A 8WDFN
Manufacturer: ON Semiconductor
Win Source Part Number: 719818-NTTFS4C06NTAG
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerWDFN
Power Dissipation (Maximum): 810mW, 31W
Popularity: Low
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 11A, 67A
Rds On (Maximum) at Id, Vgs: 4.2mOhm at 30A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 36nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3366pF at 15V
N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)
MOSFET N-CH 30V 11A/67A 8WDFN
MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH
MOSFET, N-CH, 30V, 67A, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:67A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTTFS4C06NTAG | NTTFS4C06NTAG | 719818-NTTFS4C06NTAG | NTTFS4C06NTAGOSDKR-ND | NTTFS4C06NTAG | NTTFS4C06NTAG | 13AC3902 |
| Product Name | N-Channel 30V 65A MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - NTTFS4C06NTAG | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 67A, Wdfn; Transistor Polarity Onsemi |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 810 milliwatts | 810 milliwatts | 810 to 31000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts |
