Power MOSFET 30V 75A 3.6 mOhm Single N-Channel u8FL, WDFN8 3.3x3.3, 0.65P, 1500-REEL Product overview: NTTFS4C05NTAG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 75A, 3.6 mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 75A, 3.6 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTFS4C05NTAG can be used for catalog matching and distributor lookup.
N-Channel 30V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 30V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
N-Channel 30V 12A (Ta), 75A (Tc) 820mW (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
Manufacturer: ON Semiconductor
Win Source Part Number: 1084039-NTTFS4C05NTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Family Name: NTTFS4C05N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-WDFN (3.3x3.3)
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 75A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1988pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.6 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): RQ3E180BNTB; BSZ0904NSIXT; BSZ0904NSIATMA1;
Introduction Date: October 22, 2012
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 12A/75A 8WDFN
MOSFET N-CH 30V 12A/75A 8WDFN
MOSFET, N-CH, 30V, 19.4A, WDFN; Transistor Polarity:N Channel; Continuous Drain Current Id:19.4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTTFS4C05NTAG | NTTFS4C05NTAGOSCT-ND | 1084039-NTTFS4C05NTAG | NTTFS4C05NTAG | NTTFS4C05NTAG | 02AC3813 |
| Product Name | N-Channel 30V 75A 3.6 mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTFS4C05NTAG | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 19.4A, Wdfn; Transistor Polarity Onsemi |
| PD | 820 milliwatts | 820 to 33000 milliwatts | 820 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | 8-PowerWDFN | SOT3; 8-WDFN (3.3x3.3) | 8-PowerWDFN | 8-PowerWDFN | TO-3 | |
| V(BR)DSS | 30 volts | 30 volts |
