onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single NTTFS1D2N02P1E

Description
Win Source Part Number: 1115892-NTTFS1D2N02P 1E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2V @ 934µA Power Dissipation (Max): 820mW (Ta), 52W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTTFS1D2N02P1EDK R,488-NTTFS1D2N02P1E TR,488-NTTFS1D2N02P1 ECT Base Product Number: NTTFS1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1115892-NTTFS1D2N02P 1E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2V @ 934µA Power Dissipation (Max): 820mW (Ta), 52W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTTFS1D2N02P1EDK R,488-NTTFS1D2N02P1E TR,488-NTTFS1D2N02P1 ECT Base Product Number: NTTFS1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1115892-NTTFS1D2N02P1E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1115892-NTTFS1D2N02P1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1115892-NTTFS1D2N02P1E
Win Source Part Number: 1115892-NTTFS1D2N02P 1E Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2V @ 934µA Power Dissipation (Max): 820mW (Ta), 52W (Tc) Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (3.3x3.3) Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: 488-NTTFS1D2N02P1EDK R,488-NTTFS1D2N02P1E TR,488-NTTFS1D2N02P1 ECT Base Product Number: NTTFS1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1115892-NTTFS1D2N02P1E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 2V @ 934µA
Power Dissipation (Max): 820mW (Ta), 52W (Tc)
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (3.3x3.3)
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V
Vgs (Max): +16V, -12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 488-NTTFS1D2N02P1EDKR,488-NTTFS1D2N02P1ETR,488-NTTFS1D2N02P1ECT
Base Product Number: NTTFS1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - NTTFS1D2N02P1E - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTTFS1D2N02P1E
Single FETs, MOSFETs NTTFS1D2N02P1E
MOSFET N-CH 25V 23A/180A 8PQFN

MOSFET N-CH 25V 23A/180A 8PQFN

Supplier's Site Datasheet
Single FETs, MOSFETs - 488-NTTFS1D2N02P1ECT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTTFS1D2N02P1ECT-ND
Single FETs, MOSFETs 488-NTTFS1D2N02P1ECT-ND
N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTTFS1D2N02P1EDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTTFS1D2N02P1EDKR-ND
Single FETs, MOSFETs 488-NTTFS1D2N02P1EDKR-ND
N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTTFS1D2N02P1ETR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTTFS1D2N02P1ETR-ND
Single FETs, MOSFETs 488-NTTFS1D2N02P1ETR-ND
N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

N-Channel 25V 23A (Ta), 180A (Tc) 820mW (Ta), 52W (Tc) Surface Mount 8-PQFN (3.3x3.3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTFS1D2N02P1E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTFS1D2N02P1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTFS1D2N02P1E
MOSFET N-CH 25V 23A/180A 8PQFN

MOSFET N-CH 25V 23A/180A 8PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1115892-NTTFS1D2N02P1E NTTFS1D2N02P1E 488-NTTFS1D2N02P1ECT-ND NTTFS1D2N02P1E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 820 to 52000 milliwatts 820 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN
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