The NTTFD4D0N04HL is a dual N-Channel MOSFET designed for applications requiring efficient power management. It operates at a maximum drain-to-source voltage of 40V and can handle continuous drain currents of up to 60A at 25¬8C. The device features a low on-resistance of 4.5 mOc at a gate-source voltage of 10V and 7 mOc at 4.5V, which contributes to reduced power losses during operation. This MOSFET is packaged in a WQFN12 format, facilitating compact designs and efficient thermal management with a thermal resistance of 4.8¬8C/W from junction to case. It is RoHS compliant, making it suitable for environmentally conscious applications. Typical applications include computing, communications, and general-purpose point-of-load power management. The device also offers low inductance packaging, which minimizes switching losses and enhances performance in synchronous buck converter configurations.
ON Semiconductor NTTFD4D0N04HLTWG
Mosfet Array 2 N-Channel (Dual) 40V 15A (Ta), 60A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) 40V 15A (Ta), 60A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) 40V 15A (Ta), 60A (Tc) 1.7W (Ta), 26W (Tc) Surface Mount 12-WQFN (3.3x3.3)
MOSFET, Power, 40V POWERTRENCH® Power Clip Half Bridge Configuration, 3000-REEL Product overview: NTTFD4D0N04HLTWG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-NTTFD4D0N04HLTWG
Win Source Part Number: 1337929-NTTFD4D0N04H
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta) , 26W (Tc)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 12-PowerWQFN
Supplier Device Package: 12-WQFN (3.3x3.3)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NTTFD4
Current - Continuous Drain (Id) @ 25°C: 15A (Ta) , 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
MOSFET, DUAL N-CH, 40V, 60A, WQFN ROHS COMPLIANT: YES
MOSFET 2N-CH 40V 15A/60A 12WQFN
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2025718 | 2025718P | 488-NTTFD4D0N04HLTWGDKR-ND | 289-NTTFD4D0N04HLTWG | 1337929-NTTFD4D0N04HLTWG | 74AH4849 | NTTFD4D0N04HLTWG |
| Product Name | MOSFETs | MOSFETs | FET, MOSFET Arrays | 40V MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays | Mosfet, Dual N-Ch, 40V, 60A, Wqfn Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | ||||||
| Package Type | Wqfn12 | WQFN | 12-PowerWQFN | SOT3 | TO-3 | 12-PowerWQFN |
