onsemi Single FETs, MOSFETs NTTD4401FR2G

Description
P-Channel 20V 2.4A (Ta) 780mW (Ta) Surface Mount 8-MSOP
Request a Quote Datasheet
Description
P-Channel 20V 2.4A (Ta) 780mW (Ta) Surface Mount 8-MSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTTD4401FR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTTD4401FR2GOSTR-ND
Single FETs, MOSFETs NTTD4401FR2GOSTR-ND
P-Channel 20V 2.4A (Ta) 780mW (Ta) Surface Mount 8-MSOP

P-Channel 20V 2.4A (Ta) 780mW (Ta) Surface Mount 8-MSOP

Buy Now Datasheet
Singapore
P-Channel Dual Schottky 20V MOSFET Transistor
278-NTTD4401FR2G
P-Channel Dual Schottky 20V MOSFET Transistor 278-NTTD4401FR2G
Power MOSFET 20V 3.3A 90 mOhm Dual P-Channel Micro8 with Schottky Diode, Micro 8 lead Surface Mount, 4000-REEL Product overview: NTTD4401FR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, Schottky, 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, Schottky, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTD4401FR2G can be used for catalog matching and distributor lookup.

Power MOSFET 20V 3.3A 90 mOhm Dual P-Channel Micro8 with Schottky Diode, Micro 8 lead Surface Mount, 4000-REEL Product overview: NTTD4401FR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, Dual, Schottky, 20V, 3.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, Schottky, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTTD4401FR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTD4401FR2G - 1084032-NTTD4401FR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTD4401FR2G
1084032-NTTD4401FR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTD4401FR2G 1084032-NTTD4401FR2G
Manufacturer: ON Semiconductor Win Source Part Number: 1084032-NTTD4401FR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Power Dissipation (Max): 780mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Micro8 Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 750pF @ 16V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V Alternative Parts (Cross-Reference): NTTD1P02R2; NTTD1P02R2G; NTTD4401FR2; NTTD4401FR2G; Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084032-NTTD4401FR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 780mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: Micro8
Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 750pF @ 16V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 90 mOhm @ 3.3A, 4.5V
Alternative Parts (Cross-Reference): NTTD1P02R2; NTTD1P02R2G; NTTD4401FR2; NTTD4401FR2G;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTTD4401FR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTTD4401FR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTTD4401FR2G
MOSFET P-CH 20V 2.4A MICRO8

MOSFET P-CH 20V 2.4A MICRO8

Supplier's Site
MOSFET P-CH 20V 2.4A 8MICRO - 598-NTTD4401FR2G - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 20V 2.4A 8MICRO
598-NTTD4401FR2G
MOSFET P-CH 20V 2.4A 8MICRO 598-NTTD4401FR2G
MOSFET P-CH 20V 2.4A 8MICRO

MOSFET P-CH 20V 2.4A 8MICRO

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTTD4401FR2GOSTR-ND 278-NTTD4401FR2G 1084032-NTTD4401FR2G NTTD4401FR2G 598-NTTD4401FR2G
Product Name Single FETs, MOSFETs P-Channel Dual Schottky 20V MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTTD4401FR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET P-CH 20V 2.4A 8MICRO
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type "8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)" SOT3; Micro8 750 pF @ 16 V
PD 780 milliwatts 780 milliwatts 1420 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
V(BR)DSS 20 volts -20 volts
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