Manufacturer: ON Semiconductor
Win Source Part Number: 025830-NTS4001NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330mW (Ta)
Family Name: NTS4001N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3 (SOT323)
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 270mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Gate Charge: 1.3nC @ 5V
Max Input Capacitance: 33pF @ 5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 10mA, 4V
Alternative Parts (Cross-Reference): RHU003N03FRAT106; RHU003N03T106; RJU003N03FRAT106; DMN63D8LW-13;
Introduction Date: September 17, 2003
ECCN: EAR99
Country of Origin: China , United States of America
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 270MA SC70-3
N-Channel 30V 270mA (Ta) 330mW (Ta) Surface Mount SC-70-3 (SOT323)
N-Channel 30V 270mA (Ta) 330mW (Ta) Surface Mount SC-70-3 (SOT323)
N-Channel 30V 270mA (Ta) 330mW (Ta) Surface Mount SC-70-3 (SOT323)
MOSFET N-CH 30V 270MA SC70-3
N CHANNEL MOSFET, 30V, 270mA, SC-70; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:270mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 0.27A, SOT-323-3; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:270mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 270 mA, 30 V, 1 ohm, 4 V, 1.2 V RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025830-NTS4001NT1G | NTS4001NT1G | NTS4001NT1GOSCT-ND | NTS4001NT1G | NTS4001NT1G | 83H7842 | 29X6223 | 58M9933 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTS4001NT1G | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 270Ma, Sc-70; Channel Type Onsemi | Mosfet, N Channel, 30V, 0.27A, Sot-323-3; Channel Type Onsemi | Mosfet Transistor, N Channel, 270 Ma, 30 V, 1 Ohm, 4 V, 1.2 V Rohs Compliant Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 330 milliwatts | 330 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
