P-Channel JFET, -8V, 1.4A, 100mR, SOT-323 Product overview: NTS2101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -8V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -8V, 1.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTS2101PT1G can be used for catalog matching and distributor lookup.
P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
Manufacturer: ON Semiconductor
Win Source Part Number: 025829-NTS2101PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 290mW (Ta)
Family Name: NTS2101P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3 (SOT323)
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 6.4nC @ 5V
Max Input Capacitance: 640pF @ 8V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 100 mOhm @ 1A, 4.5V
Introduction Date: June 08, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET P-CH 8V 1.4A SC70-3
MOSFET Transistor, P Channel, 1.4 A, 8 V, 100 mohm, -4.5 V, -700 mV RoHS Compliant: Yes
P CHANNEL MOSFET, -8V, 1.4A SOT-323, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:290mW RoHS Compliant: Yes
P CHANNEL MOSFET, -8V, 1.4A SOT-323; Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTS2101PT1G | NTS2101PT1GOSTR-ND | 025829-NTS2101PT1G | NTS2101PT1G | 58M9932 | 45J2180 | 10N9726 | NTS2101PT1G |
| Product Name | P-Channel -8V 1.4A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTS2101PT1G | Single FETs, MOSFETs | Mosfet Transistor, P Channel, 1.4 A, 8 V, 100 Mohm, -4.5 V, -700 Mv Rohs Compliant Onsemi | P Channel Mosfet, -8V, 1.4A Sot-323, Full Reel; Channel Type Onsemi | P Channel Mosfet, -8V, 1.4A Sot-323; Channel Type Onsemi | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |
| PD | 290 milliwatts | 290 milliwatts | 290 milliwatts | 290 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT323; SC-70, SOT-323 | SOT3; SOT323; SC-70-3 (SOT323) | SOT323; SC-70, SOT-323 | TO-3 | TO-3; SOT3; SOT323 | TO-3; SOT3; SOT323 |
