onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G NTRV4101PT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084017-NTRV4101PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 420mW (Ta) Family Name: NTRV4101PT1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 675pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 1.6A, 4.5V Alternative Parts (Cross-Reference): LT2301APb; TSM2313CX RF; TSM650P02CX RFG; Introduction Date: March 06, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1084017-NTRV4101PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 420mW (Ta) Family Name: NTRV4101PT1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 675pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 1.6A, 4.5V Alternative Parts (Cross-Reference): LT2301APb; TSM2313CX RF; TSM650P02CX RFG; Introduction Date: March 06, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G - 1084017-NTRV4101PT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G
1084017-NTRV4101PT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G 1084017-NTRV4101PT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1084017-NTRV4101PT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 420mW (Ta) Family Name: NTRV4101PT1 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 8.5nC @ 4.5V Max Input Capacitance: 675pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 85 mOhm @ 1.6A, 4.5V Alternative Parts (Cross-Reference): LT2301APb; TSM2313CX RF; TSM650P02CX RFG; Introduction Date: March 06, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1084017-NTRV4101PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 420mW (Ta)
Family Name: NTRV4101PT1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Max Input Capacitance: 675pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 85 mOhm @ 1.6A, 4.5V
Alternative Parts (Cross-Reference): LT2301APb; TSM2313CX RF; TSM650P02CX RFG;
Introduction Date: March 06, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTRV4101PT1GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTRV4101PT1GDKR-ND
Single FETs, MOSFETs 488-NTRV4101PT1GDKR-ND
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTRV4101PT1GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTRV4101PT1GTR-ND
Single FETs, MOSFETs 488-NTRV4101PT1GTR-ND
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTRV4101PT1GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTRV4101PT1GCT-ND
Single FETs, MOSFETs 488-NTRV4101PT1GCT-ND
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
Single FETs, MOSFETs - NTRV4101PT1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTRV4101PT1G
Single FETs, MOSFETs NTRV4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3

MOSFET P-CH 20V 1.8A SOT23-3

Supplier's Site Datasheet
Singapore
P-Channel -20V 3.2A SOT-23 MOSFET Transistor
278-NTRV4101PT1G
P-Channel -20V 3.2A SOT-23 MOSFET Transistor 278-NTRV4101PT1G
P-Channel JFET, -20V, 3.2A, 70mΩ, SOT-23 Product overview: NTRV4101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, 3.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 3.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTRV4101PT1G can be used for catalog matching and distributor lookup.

P-Channel JFET, -20V, 3.2A, 70mΩ, SOT-23 Product overview: NTRV4101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, 3.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 3.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTRV4101PT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTRV4101PT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTRV4101PT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTRV4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3

MOSFET P-CH 20V 1.8A SOT23-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PFET 20V 3.2A 85MO

MOSFET PFET 20V 3.2A 85MO

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1084017-NTRV4101PT1G 488-NTRV4101PT1GDKR-ND NTRV4101PT1G 278-NTRV4101PT1G NTRV4101PT1G NTRV4101PT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G Single FETs, MOSFETs Single FETs, MOSFETs P-Channel -20V 3.2A SOT-23 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts 20 volts
PD 420 milliwatts 420 milliwatts 420 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3
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