P-Channel JFET, -20V, 3.2A, 70mΩ, SOT-23 Product overview: NTRV4101PT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -20V, 3.2A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, 3.2A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTRV4101PT1G can be used for catalog matching and distributor lookup.
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.8A (Ta) 420mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer: ON Semiconductor
Win Source Part Number: 1084017-NTRV4101PT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 420mW (Ta)
Family Name: NTRV4101PT1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 8.5nC @ 4.5V
Max Input Capacitance: 675pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 85 mOhm @ 1.6A, 4.5V
Alternative Parts (Cross-Reference): LT2301APb; TSM2313CX RF; TSM650P02CX RFG;
Introduction Date: March 06, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
MOSFET P-CH 20V 1.8A SOT23-3
MOSFET P-CH 20V 1.8A SOT23-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTRV4101PT1G | 488-NTRV4101PT1GDKR-ND | 1084017-NTRV4101PT1G | NTRV4101PT1G | NTRV4101PT1G | NTRV4101PT1G |
| Product Name | P-Channel -20V 3.2A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTRV4101PT1G | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel; P-Channel | ||
| PD | 420 milliwatts | 420 milliwatts | 420 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT3; SOT23; SOT-23-3 (TO-236) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | ||
| Transistor Grade / Operating Range | Automotive |