onsemi Single FETs, MOSFETs NTR4171PT3G

Description
P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
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Description
P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - NTR4171PT3G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTR4171PT3G-ND
Single FETs, MOSFETs NTR4171PT3G-ND
P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)

P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTR4171PT3G - 1084010-NTR4171PT3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTR4171PT3G
1084010-NTR4171PT3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTR4171PT3G 1084010-NTR4171PT3G
Manufacturer: ON Semiconductor Win Source Part Number: 1084010-NTR4171PT3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 480mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.2A (Ta) Gate-Source Threshold Voltage: 1.4V @ 250μA Max Gate Charge: 15.6nC @ 10V Max Input Capacitance: 720pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 75 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1084010-NTR4171PT3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 480mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 1.4V @ 250μA
Max Gate Charge: 15.6nC @ 10V
Max Input Capacitance: 720pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 75 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTR4171PT3G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTR4171PT3G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTR4171PT3G
MOSFET P-CH 30V 2.2A SOT23-3

MOSFET P-CH 30V 2.2A SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTR4171PT3G-ND 1084010-NTR4171PT3G NTR4171PT3G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTR4171PT3G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3
V(BR)DSS 30 volts
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