MOSFET P-CH 20V 1.3A SOT23-3
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
P-Channel 20V 1.3A (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)
NTR1P02LT3G, PFET SOT23 20V 1A 180MOHM
NTR1P02LT3G, PFET SOT23 20V 1A 180MOHM
NTR1P02LT3G, PFET SOT23 20V 1A 180MOHM
Manufacturer: ON Semiconductor
Win Source Part Number: 1084003-NTR1P02LT3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.3A (Ta)
Gate-Source Threshold Voltage: 1.25V @ 250μA
Max Gate Charge: 5.5nC @ 4V
Max Input Capacitance: 225pF @ 5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 220 mOhm @ 750mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
20V 1.3A 220mΩ@750mA,4.5V 400mW 1.25V@250uA P Channel SOT-23 MOSFETs ROHS
MOSFET P-CH 20V 1.3A SOT23-3
MOSFET, P CHANNEL, -20V, -1.3A, SOT-23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1V; RoHS Compliant: Yes
P CHANNEL MOSFET, -20V, 1.3A SOT-23, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Power Dissipation:400mW RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTR1P02LT3G | NTR1P02LT3GOSDKR-ND | 8080060P | 8080060 | 1084003-NTR1P02LT3G | NTR1P02LT3G | NTR1P02LT3G | 81Y7054 | 05R9179 | NTR1P02LT3G |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTR1P02LT3G | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -20V, -1.3A, Sot-23-3; Transistor Polarity Onsemi | P Channel Mosfet, -20V, 1.3A Sot-23, Full Reel; Channel Type Onsemi | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||||||
| IDSS | 1300 milliamps | -1300 milliamps | 1300 milliamps | |||||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts | 400 milliwatts |
