Win Source Part Number: 1353994-NTPF360N80S3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 53 pct.
MSL Level: Not Applicable
Mfr: onsemi
Series: SuperFET® III
Package: Tube
Product Status: Not For New Designs
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Base Product Number: NTPF360
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 400 V
Power Dissipation (Max): 31W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET N-CH 800V 13A TO220FP
N-Channel 800V 13A (Tc) 31W (Tc) Through Hole TO-220FP
MOSFET N-CH 800V 13A TO220FP
MOSFET, N-CH, 800V, 13A, TO-220FP ROHS COMPLIANT: YES
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1353994-NTPF360N80S3Z | 2052505 | 2052506P | NTPF360N80S3Z | 488-NTPF360N80S3Z-ND | NTPF360N80S3Z | 82AH7662 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 13A, To-220Fp Rohs Compliant Onsemi |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| PD | 31000 milliwatts | 31000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-220; SOT3 | TO-220; To-220f | TO-220; TO-220 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | 10V | TO-3; TO-220 |
| Transistor Technology / Material | Si | MOSFET (Metal Oxide) |
