onsemi Single FETs, MOSFETs NTP75N06L

Description
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220
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Description
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTP75N06LOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTP75N06LOS-ND
Single FETs, MOSFETs NTP75N06LOS-ND
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220

N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06L - 1083997-NTP75N06L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06L
1083997-NTP75N06L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06L 1083997-NTP75N06L
Manufacturer: ON Semiconductor Win Source Part Number: 1083997-NTP75N06L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 92nC @ 5V Max Input Capacitance: 4370pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 37.5A, 5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083997-NTP75N06L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 92nC @ 5V
Max Input Capacitance: 4370pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 37.5A, 5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTP75N06L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTP75N06L
Single FETs, MOSFETs NTP75N06L
MOSFET N-CH 60V 75A TO220AB

MOSFET N-CH 60V 75A TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP75N06L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP75N06L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP75N06L
MOSFET N-CH 60V 75A TO220AB

MOSFET N-CH 60V 75A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTP75N06LOS-ND 1083997-NTP75N06L NTP75N06L NTP75N06L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06L Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
V(BR)DSS 60 volts 60 volts
PD 2400 to 214000 milliwatts 2400 milliwatts
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