onsemi Single FETs, MOSFETs NTP75N06

Description
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTP75N06OS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTP75N06OS-ND
Single FETs, MOSFETs NTP75N06OS-ND
N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220

N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06 - 1083996-NTP75N06 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06
1083996-NTP75N06
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06 1083996-NTP75N06
Manufacturer: ON Semiconductor Win Source Part Number: 1083996-NTP75N06 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 214W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 10V Max Input Capacitance: 4510pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 1083996-NTP75N06
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 4510pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 37.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP75N06 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP75N06
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP75N06
MOSFET N-CH 60V 75A TO220AB

MOSFET N-CH 60V 75A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTP75N06OS-ND 1083996-NTP75N06 NTP75N06
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP75N06 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 60 volts
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