Manufacturer: ON Semiconductor
Win Source Part Number: 060693-NTP6413ANG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 51nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 28 mOhm @ 42A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
N-CH Power MOSFET 100V 42A TO-220AB Through Hole Product overview: NTP6413ANG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 100V, 42A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 42A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP6413ANG can be used for catalog matching and distributor lookup.
N-Channel 100V 42A (Tc) 136W (Tc) Through Hole TO-220
MOSFET Transistor; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:136W RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060693-NTP6413ANG | 278-NTP6413ANG | NTP6413ANGOS-ND | 63R4590 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6413ANG | Through-Hole 100V 42A MOSFET Transistor | Single FETs, MOSFETs | Mosfet Transistor; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | ||
| PD | 136000 milliwatts | 136000 milliwatts | 136000 milliwatts | |
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) |
