onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG NTP6412ANG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083988-NTP6412ANG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG - 1083988-NTP6412ANG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTP6412ANG - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - NTP6412ANGOS-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi - 14AC4777 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor; Transistor Polarity Onsemi - 63R4589 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP6412ANG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083988-NTP6412ANG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG - 1083988-NTP6412ANG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG
1083988-NTP6412ANG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG 1083988-NTP6412ANG
Manufacturer: ON Semiconductor Win Source Part Number: 1083988-NTP6412ANG Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 167W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 58A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 100nC @ 10V Max Input Capacitance: 3500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083988-NTP6412ANG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTP6412ANG - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTP6412ANG
Single FETs, MOSFETs NTP6412ANG
MOSFET N-CH 100V 58A TO220AB

MOSFET N-CH 100V 58A TO220AB

Supplier's Site Datasheet
Single FETs, MOSFETs - NTP6412ANGOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTP6412ANGOS-ND
Single FETs, MOSFETs NTP6412ANGOS-ND
N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220

N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTP6412ANG
MOSFET NTP6412ANG
MOSFET NFET TO220 100V 72A

MOSFET NFET TO220 100V 72A

Buy Now Datasheet
Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi - 14AC4777 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi
14AC4777
Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi 14AC4777
MOSFET, N-CH, 100V, 58A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 58A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor; Transistor Polarity Onsemi - 63R4589 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor; Transistor Polarity Onsemi
63R4589
Mosfet Transistor; Transistor Polarity Onsemi 63R4589
MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:58A; On Resistance Rds(on):0.0168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes

MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:58A; On Resistance Rds(on):0.0168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP6412ANG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP6412ANG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP6412ANG
MOSFET N-CH 100V 58A TO220AB

MOSFET N-CH 100V 58A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1083988-NTP6412ANG NTP6412ANG NTP6412ANGOS-ND NTP6412ANG 14AC4777 63R4589 NTP6412ANG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi Mosfet Transistor; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 167000 milliwatts 167000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3 TO-3; TO-220 TO-3 TO-220; TO-220-3
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