Manufacturer: ON Semiconductor
Win Source Part Number: 1083988-NTP6412ANG
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 58A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 18.2 mOhm @ 58A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
N-Channel 100V 58A (Tc) 167W (Tc) Through Hole TO-220
N-CH Power MOSFET 100V 58A TO-220AB Through Hole Product overview: NTP6412ANG from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 100V, 58A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Through-Hole, 100V, 58A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP6412ANG can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 58A TO220AB
MOSFET N-CH 100V 58A TO220AB
MOSFET, N-CH, 100V, 58A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET Transistor; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:58A; On Resistance Rds(on):0.0168ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3Pins RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1083988-NTP6412ANG | NTP6412ANGOS-ND | 278-NTP6412ANG | NTP6412ANG | NTP6412ANG | 14AC4777 | 63R4589 | NTP6412ANG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP6412ANG | Single FETs, MOSFETs | Through-Hole 100V 58A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 58A, To-220; Transistor Polarity Onsemi | Mosfet Transistor; Transistor Polarity Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||
| PD | 167000 milliwatts | 167000 milliwatts | 167000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-3 |
