onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G NTP45N06G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083973-NTP45N06G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 45A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G - 1083973-NTP45N06G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTP45N06GOS-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP45N06G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 42033938 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083973-NTP45N06G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 45A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G - 1083973-NTP45N06G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G
1083973-NTP45N06G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G 1083973-NTP45N06G
Manufacturer: ON Semiconductor Win Source Part Number: 1083973-NTP45N06G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.4W (Ta), 125W (Tj) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 45A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1725pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 26 mOhm @ 22.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: ON Semiconductor
Win Source Part Number: 1083973-NTP45N06G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 45A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1725pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 26 mOhm @ 22.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Single FETs, MOSFETs - NTP45N06GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTP45N06GOS-ND
Single FETs, MOSFETs NTP45N06GOS-ND
N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Through Hole TO-220

N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Through Hole TO-220

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 45A MOSFET Transistor
278-NTP45N06G
60V 45A MOSFET Transistor 278-NTP45N06G
60V 45A N-CH MOSFET TO-220AB 26mR Power Transistor Product overview: NTP45N06G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP45N06G can be used for catalog matching and distributor lookup.

60V 45A N-CH MOSFET TO-220AB 26mR Power Transistor Product overview: NTP45N06G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP45N06G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP45N06G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP45N06G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP45N06G
MOSFET N-CH 60V 45A TO220AB

MOSFET N-CH 60V 45A TO220AB

Supplier's Site
Transistor - 42033938 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
42033938
Transistor 42033938
DISCONTINUED BY MANUFACTURER, TRANSISTOR, THROUGH HOLE MOUNTING, 1 CHANNEL, HEIGHT: 9.28 MM, LENGTH: 10.28 MM, WIDTH: 4.82 MM, ID - CONTINUOUS DRAIN CURRENT: 45 A, POWER DISSIPATION: 125 W, FALL TIME: 106 NS. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, THROUGH HOLE MOUNTING, 1 CHANNEL, HEIGHT: 9.28 MM, LENGTH: 10.28 MM, WIDTH: 4.82 MM, ID - CONTINUOUS DRAIN CURRENT: 45 A, POWER DISSIPATION: 125 W, FALL TIME: 106 NS. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1083973-NTP45N06G NTP45N06GOS-ND 278-NTP45N06G NTP45N06G 42033938
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTP45N06G Single FETs, MOSFETs 60V 45A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
PD 2400 to 125000 milliwatts 125000 milliwatts
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