onsemi Single FETs, MOSFETs NTP082N65S3F

Description
N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3
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Description
N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Single FETs, MOSFETs - NTP082N65S3FOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTP082N65S3FOS-ND
Single FETs, MOSFETs NTP082N65S3FOS-ND
N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3

N-Channel 650V 40A (Tc) 313W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1340625-NTP082N65S3F - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1340625-NTP082N65S3F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1340625-NTP082N65S3F
Win Source Part Number: 1340625-NTP082N65S3F Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: FRFET®, SuperFET® II Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Power Dissipation (Max): 313W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: Not Applicable REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Base Product Number: NTP082 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V

Win Source Part Number: 1340625-NTP082N65S3F
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: FRFET®, SuperFET® II
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 313W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: NTP082
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V

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Sheung Wan, Hong Kong
MOSFET SF3 FRFET 650V 82MOHM

MOSFET SF3 FRFET 650V 82MOHM

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP082N65S3F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP082N65S3F
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP082N65S3F
MOSFET N-CH 650V 40A TO220-3

MOSFET N-CH 650V 40A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTP082N65S3FOS-ND 1340625-NTP082N65S3F NTP082N65S3F NTP082N65S3F
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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