onsemi Single FETs, MOSFETs NTP055N65S3H

Description
MOSFET N-CH 650V 47A TO220-3
Request a Quote Datasheet
Description
MOSFET N-CH 650V 47A TO220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTP055N65S3H - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTP055N65S3H
Single FETs, MOSFETs NTP055N65S3H
MOSFET N-CH 650V 47A TO220-3

MOSFET N-CH 650V 47A TO220-3

Supplier's Site Datasheet
Singapore
N-Channel 650 V 47 A TO-220 MOSFET Transistor
278-NTP055N65S3H
N-Channel 650 V 47 A TO-220 MOSFET Transistor 278-NTP055N65S3H
Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 47 A, 55 mΩ, TO-220 MOSFET - Power, N‐Channel, SUPERFET®? III, FAST, 800-TUBE Product overview: NTP055N65S3H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 47 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 47 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP055N65S3H can be used for catalog matching and distributor lookup.

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 47 A, 55 mΩ, TO-220 MOSFET - Power, N‐Channel, SUPERFET®? III, FAST, 800-TUBE Product overview: NTP055N65S3H from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 47 A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 47 A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTP055N65S3H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1354481-NTP055N65S3H - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1354481-NTP055N65S3H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1354481-NTP055N65S3H
Win Source Part Number: 1354481-NTP055N65S3H Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 43 pct. MSL Level: Not Applicable Mfr: onsemi Series: SuperFET® III Package: Tube Product Status: Not For New Designs Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Base Product Number: NTP055 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4.8mA Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V Power Dissipation (Max): 305W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1354481-NTP055N65S3H
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 43 pct.
MSL Level: Not Applicable
Mfr: onsemi
Series: SuperFET® III
Package: Tube
Product Status: Not For New Designs
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Product Number: NTP055
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 4.8mA
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 4305 pF @ 400 V
Power Dissipation (Max): 305W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Single FETs, MOSFETs - 488-NTP055N65S3H-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
488-NTP055N65S3H-ND
Single FETs, MOSFETs 488-NTP055N65S3H-ND
N-Channel 650V 47A (Tc) 305W (Tc) Through Hole TO-220-3

N-Channel 650V 47A (Tc) 305W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTP055N65S3H - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTP055N65S3H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTP055N65S3H
MOSFET N-CH 650V 47A TO220-3

MOSFET N-CH 650V 47A TO220-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number NTP055N65S3H 278-NTP055N65S3H 1354481-NTP055N65S3H 488-NTP055N65S3H-ND NTP055N65S3H
Product Name Single FETs, MOSFETs N-Channel 650 V 47 A TO-220 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 47000 milliamps
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