onsemi Single FETs, MOSFETs NTMYS013N08LHTWG

The NTMYS013N08LHTWG is an N-channel MOSFET in an LFPAK4 package measuring 5x6 mm, designed for power switching applications with a drain-to-source voltage rating of 80 V and a continuous drain current of 42 A at TC = 25°C. It features a maximum on-resistance of 13.1 mΩ at 10 V gate voltage and 17.0 mΩ at 4.5 V, and is RoHS compliant. The device supports a pulsed drain current of 208 A and has a junction temperature range of -55°C to +175°C. Its thermal resistance is 2.8 °C/W from junction-to-case and 41.1 °C/W from junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 board. The part is qualified for standard industrial use and includes avalanche energy rating of 207 mJ.