onsemi Single FETs, MOSFETs NTMYS008N08LHTWG

The NTMYS008N08LH is an N-channel MOSFET rated for 80 V drain-to-source voltage, with a maximum continuous drain current of 59 A at TC = 25°C and a typical on-resistance of 8.8 mΩ at 10 V gate voltage. It is packaged in an LFPAK4 case measuring 5 × 6 mm, and features low gate charge and capacitance to minimize driver losses. Devices are RoHS compliant and meet a maximum junction temperature of 175°C. Thermal resistance is 2.0 °C/W junction-to-case and 40.6 °C/W junction-to-ambient when mounted on a 650 mm², 2 oz. Cu FR4 pad.