onsemi Single FETs, MOSFETs NTMYS006N08LHTWG

The NTMYS006N08LHTWG is an N-channel MOSFET in the LFPAK4 package, measuring 5x6 mm, designed for power switching applications. It has a drain-to-source voltage rating of 80 V, a continuous drain current of 77 A at TC = 25°C, and a maximum on-resistance of 6.2 mΩ at 10 V gate voltage. The device supports a maximum power dissipation of 89 W at TC = 25°C and features a thermal resistance of 1.7 °C/W from junction to case. It is RoHS compliant, operates from -55°C to +175°C, and meets AEC-Q200 automotive qualification standards. The part is supplied in tape and reel packaging.