onsemi Single FETs, MOSFETs NTMT045N065SC1

Description
SILICON CARBIDE (SIC) MOSFET - 3
Request a Quote Datasheet
Description
SILICON CARBIDE (SIC) MOSFET - 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMT045N065SC1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMT045N065SC1
Single FETs, MOSFETs NTMT045N065SC1
SILICON CARBIDE (SIC) MOSFET - 3

SILICON CARBIDE (SIC) MOSFET - 3

Supplier's Site Datasheet
MOSFET Transistor 278-NTMT045N065SC1
SILICON CARBIDE (SIC) MOSFET - 3 Product overview: NTMT045N065SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMT045N065SC1 can be used for catalog matching and distributor lookup.

SILICON CARBIDE (SIC) MOSFET - 3 Product overview: NTMT045N065SC1 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMT045N065SC1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 5556-NTMT045N065SC1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NTMT045N065SC1CT-ND
Single FETs, MOSFETs 5556-NTMT045N065SC1CT-ND
SILICON CARBIDE (SIC) MOSFET - 3

SILICON CARBIDE (SIC) MOSFET - 3

Buy Now Datasheet
Single FETs, MOSFETs - 5556-NTMT045N065SC1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NTMT045N065SC1TR-ND
Single FETs, MOSFETs 5556-NTMT045N065SC1TR-ND
SILICON CARBIDE (SIC) MOSFET - 3

SILICON CARBIDE (SIC) MOSFET - 3

Buy Now Datasheet
Single FETs, MOSFETs - 5556-NTMT045N065SC1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5556-NTMT045N065SC1DKR-ND
Single FETs, MOSFETs 5556-NTMT045N065SC1DKR-ND
SILICON CARBIDE (SIC) MOSFET - 3

SILICON CARBIDE (SIC) MOSFET - 3

Buy Now Datasheet
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMT045N065SC1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMT045N065SC1
SILICON CARBIDE (SIC) MOSFET - 3

SILICON CARBIDE (SIC) MOSFET - 3

Supplier's Site
Sic Mos Pqfn88 650V Onsemi - 57AK6421 - Newark, An Avnet Company
Chicago, IL, United States
Sic Mos Pqfn88 650V Onsemi
57AK6421
Sic Mos Pqfn88 650V Onsemi 57AK6421
SIC MOS PQFN88 650V

SIC MOS PQFN88 650V

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Transistors
Product Number NTMT045N065SC1 278-NTMT045N065SC1 5556-NTMT045N065SC1CT-ND NTMT045N065SC1 57AK6421
Product Name Single FETs, MOSFETs MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Mos Pqfn88 650V Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material SiCFET (Silicon Carbide) Silicon Carbide
V(BR)DSS 650 volts 650 volts
IDSS 55000 milliamps
PD 187000 milliwatts 187 milliwatts
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