SILICON CARBIDE (SIC) MOSFET - 3
SILICON CARBIDE (SIC) MOSFET - 3
SILICON CARBIDE (SIC) MOSFET - 3
SILICON CARBIDE (SIC) MOSFET - 3
SIC MOS PQFN88 650V
SILICON CARBIDE (SIC) MOSFET - 3
| DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 5556-NTMT045N065SC1CT-ND | NTMT045N065SC1 | 57AK6421 | NTMT045N065SC1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Sic Mos Pqfn88 650V Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Silicon Carbide | SiCFET (Silicon Carbide) | ||
| Package Type | 4-PowerTSFN | 4-PowerTSFN | TO-3 | Surface Mount |
| V(BR)DSS | 650 volts |
