onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG NTMSD6N303R2SG

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083952-NTMSD6N303R2 SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 950pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 32 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG - 1083952-NTMSD6N303R2SG - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTMSD6N303R2SG-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMSD6N303R2SG - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083952-NTMSD6N303R2 SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 950pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 32 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG - 1083952-NTMSD6N303R2SG - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG
1083952-NTMSD6N303R2SG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG 1083952-NTMSD6N303R2SG
Manufacturer: ON Semiconductor Win Source Part Number: 1083952-NTMSD6N303R2 SG Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 30nC @ 10V Max Input Capacitance: 950pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 32 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083952-NTMSD6N303R2SG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 30nC @ 10V
Max Input Capacitance: 950pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTMSD6N303R2SG-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMSD6N303R2SG-ND
Single FETs, MOSFETs NTMSD6N303R2SG-ND
N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC

N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMSD6N303R2SG - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMSD6N303R2SG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMSD6N303R2SG
MOSFET N-CH 30V 6A 8SOIC

MOSFET N-CH 30V 6A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083952-NTMSD6N303R2SG NTMSD6N303R2SG-ND NTMSD6N303R2SG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD6N303R2SG Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
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