onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD2P102R2 NTMSD2P102R2

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083947-NTMSD2P102R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.3A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 750pF @ 16V Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1083947-NTMSD2P102R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.3A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 750pF @ 16V Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD2P102R2 - 1083947-NTMSD2P102R2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD2P102R2
1083947-NTMSD2P102R2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD2P102R2 1083947-NTMSD2P102R2
Manufacturer: ON Semiconductor Win Source Part Number: 1083947-NTMSD2P102R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Isolated) Polarity: P-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2.3A (Ta) Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 750pF @ 16V Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1083947-NTMSD2P102R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.3A (Ta)
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 750pF @ 16V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now
 - NTMSD2P102R2 - Rochester Electronics
Newburyport, MA, United States
MOSFET P-CH 20V 2.3A 8-SOIC

MOSFET P-CH 20V 2.3A 8-SOIC

Supplier's Site Datasheet
Singapore, Singapore
20V 2.3A SOIC MOSFET Transistor
278-NTMSD2P102R2
20V 2.3A SOIC MOSFET Transistor 278-NTMSD2P102R2
MOSFET P-CH 20V 2.3A 8-SOIC Product overview: NTMSD2P102R2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMSD2P102R2 can be used for catalog matching and distributor lookup.

MOSFET P-CH 20V 2.3A 8-SOIC Product overview: NTMSD2P102R2 from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.3A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.3A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMSD2P102R2 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMSD2P102R2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMSD2P102R2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMSD2P102R2
MOSFET P-CH 20V 2.3A 8SOIC

MOSFET P-CH 20V 2.3A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1083947-NTMSD2P102R2 NTMSD2P102R2 278-NTMSD2P102R2 NTMSD2P102R2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMSD2P102R2 20V 2.3A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
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