onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS7N03R2G NTMS7N03R2G

Manufacturer: ON Semiconductor
Win Source Part Number: 025817-NTMS7N03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 43nC @ 10V
Max Input Capacitance: 1190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Single N-Channel Power MOSFET 30V, 7A, 23mΩ, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMS7N03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 7A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS7N03R2G can be used for catalog matching and distributor lookup.