onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2G NTMS4N01R2G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083945-NTMS4N01R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 770mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1200pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

N-Channel JFET 20V 4.2A 45mR SOIC SMD Product overview: NTMS4N01R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, SMD, 20V, 4.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4N01R2G can be used for catalog matching and distributor lookup.

N-Channel 20V 3.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC