onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2 NTMS4N01R2

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060690-NTMS4N01R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 770mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.3A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 060690-NTMS4N01R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 770mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.3A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2 - 060690-NTMS4N01R2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2
060690-NTMS4N01R2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2 060690-NTMS4N01R2
Manufacturer: ON Semiconductor Win Source Part Number: 060690-NTMS4N01R2 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 770mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.3A (Ta) Gate-Source Threshold Voltage: 1.2V @ 250μA Max Gate Charge: 16nC @ 4.5V Max Input Capacitance: 1200pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060690-NTMS4N01R2
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 770mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.3A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 16nC @ 4.5V
Max Input Capacitance: 1200pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 40 mOhm @ 4.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060690-NTMS4N01R2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4N01R2
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 770 milliwatts
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