onsemi Single FETs, MOSFETs NTMS4937NR2G

Description
N-Channel 30V 8.6A (Ta) 810mW (Ta) Surface Mount 8-SOIC
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Description
N-Channel 30V 8.6A (Ta) 810mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - NTMS4937NR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4937NR2GOSTR-ND
Single FETs, MOSFETs NTMS4937NR2GOSTR-ND
N-Channel 30V 8.6A (Ta) 810mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 8.6A (Ta) 810mW (Ta) Surface Mount 8-SOIC

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4937NR2G - 1083944-NTMS4937NR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4937NR2G
1083944-NTMS4937NR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4937NR2G 1083944-NTMS4937NR2G
Manufacturer: ON Semiconductor Win Source Part Number: 1083944-NTMS4937NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 810mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.6A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 38.5nC @ 10V Max Input Capacitance: 2563pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1083944-NTMS4937NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 810mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 38.5nC @ 10V
Max Input Capacitance: 2563pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS4937NR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS4937NR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS4937NR2G
MOSFET N-CH 30V 8.6A 8SOIC

MOSFET N-CH 30V 8.6A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Power MOSFET 30V 112A 6.5 mOhm Single

MOSFET Power MOSFET 30V 112A 6.5 mOhm Single

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTMS4937NR2GOSTR-ND 1083944-NTMS4937NR2G NTMS4937NR2G NTMS4937NR2G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4937NR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
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