onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G NTMS4916NR2G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 060687-NTMS4916NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1376pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 060687-NTMS4916NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1376pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G - 060687-NTMS4916NR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G
060687-NTMS4916NR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G 060687-NTMS4916NR2G
Manufacturer: ON Semiconductor Win Source Part Number: 060687-NTMS4916NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 890mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.8A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 15nC @ 4.5V Max Input Capacitance: 1376pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 9 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 060687-NTMS4916NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 890mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.8A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1376pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - NTMS4916NR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4916NR2GOSTR-ND
Single FETs, MOSFETs NTMS4916NR2GOSTR-ND
N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Single FETs, MOSFETs - NTMS4916NR2GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4916NR2GOSCT-ND
Single FETs, MOSFETs NTMS4916NR2GOSCT-ND
N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore, Singapore
N-Channel 30V 11.6A SOIC MOSFET Transistor
278-NTMS4916NR2G
N-Channel 30V 11.6A SOIC MOSFET Transistor 278-NTMS4916NR2G
N-Channel Power MOSFET, 30V, 11.6A, 9mΩ, SOIC-8 Product overview: NTMS4916NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 11.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4916NR2G can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 30V, 11.6A, 9mΩ, SOIC-8 Product overview: NTMS4916NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 11.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4916NR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS4916NR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS4916NR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS4916NR2G
MOSFET N-CH 30V 7.8A 8SOIC

MOSFET N-CH 30V 7.8A 8SOIC

Supplier's Site
Single FETs, MOSFETs - NTMS4916NR2G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMS4916NR2G
Single FETs, MOSFETs NTMS4916NR2G
MOSFET N-CH 30V 7.8A 8SOIC

MOSFET N-CH 30V 7.8A 8SOIC

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET NFET SO8 30V 11.4A 9MOHM

MOSFET NFET SO8 30V 11.4A 9MOHM

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 060687-NTMS4916NR2G NTMS4916NR2GOSTR-ND 278-NTMS4916NR2G NTMS4916NR2G NTMS4916NR2G NTMS4916NR2G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G Single FETs, MOSFETs N-Channel 30V 11.6A SOIC MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 30 volts 30 volts
PD 890 milliwatts 890 milliwatts 890 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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