Manufacturer: ON Semiconductor
Win Source Part Number: 060687-NTMS4916NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 890mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.8A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 15nC @ 4.5V
Max Input Capacitance: 1376pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC
N-Channel 30V 7.8A (Ta) 890mW (Ta) Surface Mount 8-SOIC
N-Channel Power MOSFET, 30V, 11.6A, 9mΩ, SOIC-8 Product overview: NTMS4916NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 11.6A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11.6A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4916NR2G can be used for catalog matching and distributor lookup.
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| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060687-NTMS4916NR2G | NTMS4916NR2GOSTR-ND | 278-NTMS4916NR2G | NTMS4916NR2G | NTMS4916NR2G | NTMS4916NR2G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4916NR2G | Single FETs, MOSFETs | N-Channel 30V 11.6A SOIC MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 890 milliwatts | 890 milliwatts | 890 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |