onsemi Single FETs, MOSFETs NTMS4816NR2G

Description
N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC
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Description
N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMS4816NR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4816NR2GOSTR-ND
Single FETs, MOSFETs NTMS4816NR2GOSTR-ND
N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 6.8A (Ta) 780mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Singapore
N-Channel 30V 11A SOIC MOSFET Transistor
278-NTMS4816NR2G
N-Channel 30V 11A SOIC MOSFET Transistor 278-NTMS4816NR2G
N-Channel Power MOSFET, 30V, 11A, 10mΩ, SOIC-8 Product overview: NTMS4816NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4816NR2G can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 30V, 11A, 10mΩ, SOIC-8 Product overview: NTMS4816NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 11A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 11A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4816NR2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTMS4816NR2G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMS4816NR2G
Single FETs, MOSFETs NTMS4816NR2G
MOSFET N-CH 30V 6.8A 8SOIC

MOSFET N-CH 30V 6.8A 8SOIC

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4816NR2G - 025815-NTMS4816NR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4816NR2G
025815-NTMS4816NR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4816NR2G 025815-NTMS4816NR2G
Manufacturer: ON Semiconductor Win Source Part Number: 025815-NTMS4816NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 780mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 6.8A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18.3nC @ 10V Max Input Capacitance: 1060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 025815-NTMS4816NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 780mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.8A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18.3nC @ 10V
Max Input Capacitance: 1060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS4816NR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS4816NR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS4816NR2G
MOSFET N-CH 30V 6.8A 8SOIC

MOSFET N-CH 30V 6.8A 8SOIC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET SO8 30V 11A NCH 0.030R

MOSFET NFET SO8 30V 11A NCH 0.030R

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTMS4816NR2GOSTR-ND 278-NTMS4816NR2G NTMS4816NR2G 025815-NTMS4816NR2G NTMS4816NR2G NTMS4816NR2G
Product Name Single FETs, MOSFETs N-Channel 30V 11A SOIC MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4816NR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" 8-SOIC (0.154", 3.90mm Width) SOT3; 8-SOIC 8-SOIC (0.154, 3.90mm Width)
PD 780 milliwatts 780 milliwatts 780 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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