onsemi N-Channel 30V 12.2A SOIC MOSFET Transistor NTMS4807NR2G

N-Channel MOSFET 30V 12.2A 6.1mR SOIC-8 Power Transistor Product overview: NTMS4807NR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 12.2A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12.2A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4807NR2G can be used for catalog matching and distributor lookup.

N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 9.1A (Ta) 860mW (Ta) Surface Mount 8-SOIC

MOSFET N-CH 30V 9.1A 8SOIC

Manufacturer: ON Semiconductor
Win Source Part Number: 025814-NTMS4807NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 860mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24nC @ 4.5V
Max Input Capacitance: 2900pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.1 mOhm @ 14.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance