onsemi Single FETs, MOSFETs NTMS4705NR2G

Description
N-Channel 30V 7.4A (Ta) 850mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
N-Channel 30V 7.4A (Ta) 850mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMS4705NR2GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4705NR2GOSTR-ND
Single FETs, MOSFETs NTMS4705NR2GOSTR-ND
N-Channel 30V 7.4A (Ta) 850mW (Ta) Surface Mount 8-SOIC

N-Channel 30V 7.4A (Ta) 850mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4705NR2G - 112484-NTMS4705NR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4705NR2G
112484-NTMS4705NR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4705NR2G 112484-NTMS4705NR2G
Manufacturer: ON Semiconductor Win Source Part Number: 112484-NTMS4705NR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 850mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 18nC @ 4.5V Max Input Capacitance: 1078pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 112484-NTMS4705NR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 850mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 1078pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS4705NR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS4705NR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS4705NR2G
MOSFET N-CH 30V 7.4A 8SOIC

MOSFET N-CH 30V 7.4A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTMS4705NR2GOSTR-ND 112484-NTMS4705NR2G NTMS4705NR2G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4705NR2G Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC 1078 pF @ 24 V
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data