P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC
P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC
P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC
P-Channel JFET -30V 8.9A 15mR SOIC Single Product overview: NTMS4177PR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -30V, 8.9A, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, 8.9A, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4177PR2G can be used for catalog matching and distributor lookup.
MOSFET P-CH 30V 6.6A 8SOIC
Manufacturer: ON Semiconductor
Win Source Part Number: 025812-NTMS4177PR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 840mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 6.6A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 3100pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 11.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
MOSFET P-CH 30V 6.6A 8SOIC
30V 6.6A 12mΩ@10V,11.4A 840mW 2.5V@250uA P Channel SOIC-8 MOSFETs ROHS
P CHANNEL MOSFET, -30V, 11.4A, SOIC, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:2.5W RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -11.4A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | NTMS4177PR2GDKR-ND | 278-NTMS4177PR2G | NTMS4177PR2G | 7804723 | 7804723P | 025812-NTMS4177PR2G | NTMS4177PR2G | NTMS4177PR2G | NTMS4177PR2G | 95M7002 | 81Y7052 |
| Product Name | Single FETs, MOSFETs | P-Channel -30V 8.9A SOIC MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4177PR2G | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | P Channel Mosfet, -30V, 11.4A, Soic, Full Reel; Channel Type Onsemi | Mosfet, P Channel, -30V, -11.4A, Soic-8; Transistor Polarity Onsemi |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | ||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | Soic | SOIC | SOT3; 8-SOIC | 8-SOIC (0.154, 3.90mm Width) | TO-3 | TO-3 | |||
| PD | 840 milliwatts | 840 milliwatts | 840 milliwatts | 840 milliwatts | 2500 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
