onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G NTMS4176PR2G

Manufacturer: ON Semiconductor
Win Source Part Number: 093464-NTMS4176PR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 810mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1720pF @ 24V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

P-Channel 30V 5.5A (Ta) 810mW (Ta) Surface Mount 8-SOIC

Power MOSFET 30V 9.6A 30 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMS4176PR2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 9.6A, 30 mOhm, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.6A, 30 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS4176PR2G can be used for catalog matching and distributor lookup.