onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G NTMS4176PR2G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 093464-NTMS4176PR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 810mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1720pF @ 24V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 093464-NTMS4176PR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 810mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1720pF @ 24V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G - 093464-NTMS4176PR2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G
093464-NTMS4176PR2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G 093464-NTMS4176PR2G
Manufacturer: ON Semiconductor Win Source Part Number: 093464-NTMS4176PR2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 810mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 17nC @ 4.5V Max Input Capacitance: 1720pF @ 24V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 093464-NTMS4176PR2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 810mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 17nC @ 4.5V
Max Input Capacitance: 1720pF @ 24V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 18 mOhm @ 9.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTMS4176PR2G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS4176PR2G-ND
Single FETs, MOSFETs NTMS4176PR2G-ND
P-Channel 30V 5.5A (Ta) 810mW (Ta) Surface Mount 8-SOIC

P-Channel 30V 5.5A (Ta) 810mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS4176PR2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS4176PR2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS4176PR2G
MOSFET P-CH 30V 5.5A 8SOIC

MOSFET P-CH 30V 5.5A 8SOIC

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 093464-NTMS4176PR2G NTMS4176PR2G-ND NTMS4176PR2G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS4176PR2G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 810 milliwatts
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