onsemi Single FETs, MOSFETs NTMS3P03R2G

Description
P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet
Description
P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMS3P03R2GOS-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMS3P03R2GOS-ND
Single FETs, MOSFETs NTMS3P03R2GOS-ND
P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC

P-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS3P03R2G - 060679-NTMS3P03R2G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS3P03R2G
060679-NTMS3P03R2G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS3P03R2G 060679-NTMS3P03R2G
Manufacturer: ON Semiconductor Win Source Part Number: 060679-NTMS3P03R2G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 730mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SOIC Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.34A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 750pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.05A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 060679-NTMS3P03R2G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 730mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOIC
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.34A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 750pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
P-Channel 30V 3.05A 85 mOhm MOSFET Transistor
278-NTMS3P03R2G
P-Channel 30V 3.05A 85 mOhm MOSFET Transistor 278-NTMS3P03R2G
Power MOSFET 30V 3.05A 85 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMS3P03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 3.05A, 85 mOhm, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.05A, 85 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS3P03R2G can be used for catalog matching and distributor lookup.

Power MOSFET 30V 3.05A 85 mOhm Single P-Channel SO-8, SOIC-8 Narrow Body, 2500-REEL Product overview: NTMS3P03R2G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V, 3.05A, 85 mOhm, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.05A, 85 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMS3P03R2G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMS3P03R2G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMS3P03R2G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMS3P03R2G
MOSFET P-CH 30V 2.34A 8SOIC

MOSFET P-CH 30V 2.34A 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTMS3P03R2GOS-ND 060679-NTMS3P03R2G 278-NTMS3P03R2G NTMS3P03R2G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMS3P03R2G P-Channel 30V 3.05A 85 mOhm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SOIC 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 30 volts
Unlock Full Specs
to access all available technical data