onsemi Single FETs, MOSFETs NTMFSS0D9N03P8

N-channel power MOSFET designed for high-current applications such as ORing, motor drives, and DC-DC conversion, housed in a 5 mm × 6 mm TDFN9 package with source-down and center-gate layout for improved thermal performance and power density. It has a drain-source breakdown voltage of 30 V, continuous drain current of 294 A at 25°C case temperature, and a maximum on-resistance of 1.0 mΩ at 10 V gate drive. The device is RoHS compliant, Pb-free, and halogen-free, with a junction temperature range of -55°C to +150°C.