The NTMFS6D1N08HT1G is an N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage of 80 V and a continuous drain current rating of 89 A at 25°C. It has a low on-resistance of 5.5 mΩ at a gate-source voltage of 10 V, which helps minimize conduction losses. The device is housed in a compact 5x6 mm DFN package, making it suitable for space-constrained designs. This MOSFET is characterized by low gate charge and capacitance, which reduces driver losses, making it ideal for synchronous rectification and power supply applications, including AC-DC and DC-DC converters. It operates over a wide temperature range from -55°C to +175°C and is compliant with RoHS standards, being free from lead, halogens, and beryllium. The device is packaged in tape and reel format for efficient handling in automated assembly processes. Engineers considering this MOSFET for their projects should note its high performance in power management applications, particularly where efficiency and thermal performance are critical.
Manufacturer: onsemi
Win Source Part Number: 1324431-NTMFS6D1N08H
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,500
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 17A, 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 3.8W, 104W (Tc)
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 8-PowerTDFN, 5 Leads
ECCN: EAR99
Fake Threat In the Open Market: 70
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: NTMFS6D1N08HT1GOSDKR
Base Product Number: NTMFS6
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
RoHS Status: ROHS3 Compliant
N-Channel 80V 17A (Ta), 89A (Tc) 3.8W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 17A (Ta), 89A (Tc) 3.8W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 80V 17A (Ta), 89A (Tc) 3.8W (Ta), 104W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Power MOSFET, 80V N Channel 89A, 5.5m Ohm in SO8-FL, 1500-REEL Product overview: NTMFS6D1N08HT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80V, 89A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 89A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS6D1N08HT1G can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 17A/89A 5DFN
MOSFET, N-CH, 80V, 89A, 175DEG C, 104W; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET T8 80V 1 PART PROLI FERATI
MOSFET N-CH 80V 17A/89A 5DFN
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324431-NTMFS6D1N08HT1G | NTMFS6D1N08HT1GOSTR-ND | 278-NTMFS6D1N08HT1G | NTMFS6D1N08HT1G | 84AC7291 | NTMFS6D1N08HT1G | NTMFS6D1N08HT1G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 80V 89A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 89A, 175Deg C, 104W; Transistor Polarity Onsemi | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 3800 to 104000 milliwatts | 3800 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 C (-67 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | SOT3; 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | TO-3 | 8-PowerTDFN, 5 Leads | ||
| Packing Method | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
