onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G NTMFS4C10NT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 121717-NTMFS4C10NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 987pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.95 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G - 121717-NTMFS4C10NT1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTMFS4C10NT1GOSCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTMFS4C10NT1GOSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTMFS4C10NT1GOSDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - NTMFS4C10NT1G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4C10NT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi - 45Y4123 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi - 60W1795 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 121717-NTMFS4C10NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 987pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.95 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G - 121717-NTMFS4C10NT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G
121717-NTMFS4C10NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G 121717-NTMFS4C10NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 121717-NTMFS4C10NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.2A (Ta) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 9.7nC @ 4.5V Max Input Capacitance: 987pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.95 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 121717-NTMFS4C10NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.2A (Ta)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 9.7nC @ 4.5V
Max Input Capacitance: 987pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.95 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4C10NT1GOSCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4C10NT1GOSCT-ND
Single FETs, MOSFETs NTMFS4C10NT1GOSCT-ND
N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4C10NT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4C10NT1GOSTR-ND
Single FETs, MOSFETs NTMFS4C10NT1GOSTR-ND
N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4C10NT1GOSDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4C10NT1GOSDKR-ND
Single FETs, MOSFETs NTMFS4C10NT1GOSDKR-ND
N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 8.2A (Ta) 750mW (Ta), 23.6W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4C10NT1G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMFS4C10NT1G
Single FETs, MOSFETs NTMFS4C10NT1G
MOSFET N-CH 30V 8.2A 5DFN

MOSFET N-CH 30V 8.2A 5DFN

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4C10NT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4C10NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4C10NT1G
MOSFET N-CH 30V 8.2A 5DFN

MOSFET N-CH 30V 8.2A 5DFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTMFS4C10NT1G
MOSFET NTMFS4C10NT1G
MOSFET NFET SO8FL 30V 46A 6.96MO

MOSFET NFET SO8FL 30V 46A 6.96MO

Buy Now Datasheet
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi - 45Y4123 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi
45Y4123
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi 45Y4123
N CHANNEL MOSFET, 30V, DFN-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, DFN-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi - 60W1795 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi
60W1795
N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi 60W1795
N CHANNEL MOSFET, 30V, DFN-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Product Range:-RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, DFN-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:46A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Product Range:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 121717-NTMFS4C10NT1G NTMFS4C10NT1GOSCT-ND NTMFS4C10NT1G NTMFS4C10NT1G NTMFS4C10NT1G 45Y4123
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C10NT1G Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 750 to 23600 milliwatts 750 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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