MOSFET N-CH 30V 9A 5DFN
Manufacturer: ON Semiconductor
Win Source Part Number: 130981-NTMFS4C09NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Family Name: NTMFS4C09N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 10.9nC @ 4.5V
Max Input Capacitance: 1252pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): RJK0305DPB-02#J0; CSD17510Q5A; CSD17578Q3A;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
N-Channel 30V 9A (Ta) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 30V 9A (Ta) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 30V 9A (Ta) 760mW (Ta), 25.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET NFET SO8FL 30V 52A 5.8MOH
MOSFET Transistor, N Channel, 52 A, 30 V, 0.0046 ohm, 10 V, 2.1 V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, DFN-5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:52A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V; Product Range:-RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, DFN-5; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:52A; On Resistance Rds(on):0.0046ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET N-CH 30V 9A 5DFN
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NTMFS4C09NT1G | 130981-NTMFS4C09NT1G | NTMFS4C09NT1GOSDKR-ND | 598-NTMFS4C09NT1G | NTMFS4C09NT1G | 51Y5000 | 60W1793 | 45Y4122 | NTMFS4C09NT1G |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C09NT1G | Single FETs, MOSFETs | MOSFET T6 LC SO8FL | MOSFET | Mosfet Transistor, N Channel, 52 A, 30 V, 0.0046 Ohm, 10 V, 2.1 V Rohs Compliant Onsemi | N Channel Mosfet, 30V, Dfn-5; Channel Type Onsemi | N Channel Mosfet, 30V, Dfn-5; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| IDSS | 9000 milliamps | 52000 milliamps | 52000 milliamps | ||||||
| PD | 760 milliwatts | 760 to 25500 milliwatts | 760 milliwatts |
