onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C09NAT1G NTMFS4C09NAT1G

Manufacturer: ON Semiconductor
Win Source Part Number: 1083930-NTMFS4C09NAT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 760mW (Ta)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta), 52A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 1.9nC @ 4.5V
Max Input Capacitance: 1252pF @ 15V
Maximum Rds On at Id,Vgs: 5.8 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 9A/52A 5DFN Product overview: NTMFS4C09NAT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9A, 52A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9A, 52A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4C09NAT1G can be used for catalog matching and distributor lookup.