onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G NTMFS4927NT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 006257-NTMFS4927NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 920mW (Ta), 20.8W (Tc) Family Name: NTMFS4927N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.9A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 913pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): CSD17579Q5AT; CSD17551Q5A; CSD17579Q5A; CSD17578Q3AT; Introduction Date: July 06, 2010 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G - 006257-NTMFS4927NT1G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NTMFS4927NT1GOSTR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 30V, 38A, Soic; Transistor Polarity Onsemi - 50AC6499 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4927NT1G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 006257-NTMFS4927NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 920mW (Ta), 20.8W (Tc) Family Name: NTMFS4927N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.9A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 913pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): CSD17579Q5AT; CSD17551Q5A; CSD17579Q5A; CSD17578Q3AT; Introduction Date: July 06, 2010 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G - 006257-NTMFS4927NT1G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G
006257-NTMFS4927NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G 006257-NTMFS4927NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 006257-NTMFS4927NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 920mW (Ta), 20.8W (Tc) Family Name: NTMFS4927N Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.9A (Ta), 38A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 913pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7.3 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): CSD17579Q5AT; CSD17551Q5A; CSD17579Q5A; CSD17578Q3AT; Introduction Date: July 06, 2010 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 006257-NTMFS4927NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 920mW (Ta), 20.8W (Tc)
Family Name: NTMFS4927N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.9A (Ta), 38A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 913pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): CSD17579Q5AT; CSD17551Q5A; CSD17579Q5A; CSD17578Q3AT;
Introduction Date: July 06, 2010
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4927NT1GOSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4927NT1GOSTR-ND
Single FETs, MOSFETs NTMFS4927NT1GOSTR-ND
N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 7.9A (Ta), 38A (Tc) 920mW (Ta), 20.8W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Mosfet, N-Ch, 30V, 38A, Soic; Transistor Polarity Onsemi - 50AC6499 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 38A, Soic; Transistor Polarity Onsemi
50AC6499
Mosfet, N-Ch, 30V, 38A, Soic; Transistor Polarity Onsemi 50AC6499
MOSFET, N-CH, 30V, 38A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 38A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4927NT1G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4927NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4927NT1G
MOSFET N-CH 30V 7.9A/38A 5DFN

MOSFET N-CH 30V 7.9A/38A 5DFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
NTMFS4927NT1G
MOSFET NTMFS4927NT1G
MOSFET TRENCH 3.1 30V 9 Ohm NCH

MOSFET TRENCH 3.1 30V 9 Ohm NCH

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 006257-NTMFS4927NT1G NTMFS4927NT1GOSTR-ND 50AC6499 NTMFS4927NT1G NTMFS4927NT1G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4927NT1G Single FETs, MOSFETs Mosfet, N-Ch, 30V, 38A, Soic; Transistor Polarity Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 920 to 20800 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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