Manufacturer: ON Semiconductor
Win Source Part Number: 060667-NTMFS4841NHT1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.6A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 11.5V
Max Input Capacitance: 2113pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 8.6A/59A 5DFN
30V 21.8A N-CH Power MOSFET, 7mR Rds On, DFN6 Product overview: NTMFS4841NHT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4841NHT1G can be used for catalog matching and distributor lookup.
N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET NFET S08FL 30V 57A 7mOhm
MOSFET N-CH 30V 8.6A/59A 5DFN
MOSFET, N-CH, 30V, 59A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 13.5A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1VRoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 060667-NTMFS4841NHT1G | NTMFS4841NHT1G | 278-NTMFS4841NHT1G | NTMFS4841NHT1GOSTR-ND | NTMFS4841NHT1G | NTMFS4841NHT1G | 50AC6497 | 57M9910 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NHT1G | Single FETs, MOSFETs | 30V 21.8A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 59A, Dfn; Transistor Polarity Onsemi | N Channel Mosfet, 30V, 13.5A, Dfn5, Full Reel; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 870 to 41700 milliwatts | 870 milliwatts | 870 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||||
| Package Type | SO-8; SOT3; 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | TO-3 | TO-3 |
