onsemi Single FETs, MOSFETs NTMFS4841NHT1G

Description
N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Request a Quote Datasheet
Description
N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMFS4841NHT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4841NHT1GOSTR-ND
Single FETs, MOSFETs NTMFS4841NHT1GOSTR-ND
N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 8.6A (Ta), 59A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Singapore
30V 21.8A MOSFET Transistor
278-NTMFS4841NHT1G
30V 21.8A MOSFET Transistor 278-NTMFS4841NHT1G
30V 21.8A N-CH Power MOSFET, 7mR Rds On, DFN6 Product overview: NTMFS4841NHT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4841NHT1G can be used for catalog matching and distributor lookup.

30V 21.8A N-CH Power MOSFET, 7mR Rds On, DFN6 Product overview: NTMFS4841NHT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4841NHT1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NTMFS4841NHT1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMFS4841NHT1G
Single FETs, MOSFETs NTMFS4841NHT1G
MOSFET N-CH 30V 8.6A/59A 5DFN

MOSFET N-CH 30V 8.6A/59A 5DFN

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NHT1G - 060667-NTMFS4841NHT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NHT1G
060667-NTMFS4841NHT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NHT1G 060667-NTMFS4841NHT1G
Manufacturer: ON Semiconductor Win Source Part Number: 060667-NTMFS4841NHT1 G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 870mW (Ta), 41.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 8.6A (Ta), 59A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 11.5V Max Input Capacitance: 2113pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 060667-NTMFS4841NHT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 870mW (Ta), 41.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 8.6A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 11.5V
Max Input Capacitance: 2113pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4841NHT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4841NHT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4841NHT1G
MOSFET N-CH 30V 8.6A/59A 5DFN

MOSFET N-CH 30V 8.6A/59A 5DFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET NFET S08FL 30V 57A 7mOhm

MOSFET NFET S08FL 30V 57A 7mOhm

Buy Now Datasheet
Mosfet, N-Ch, 30V, 59A, Dfn; Transistor Polarity Onsemi - 50AC6497 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 59A, Dfn; Transistor Polarity Onsemi
50AC6497
Mosfet, N-Ch, 30V, 59A, Dfn; Transistor Polarity Onsemi 50AC6497
MOSFET, N-CH, 30V, 59A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 30V, 59A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:59A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation RoHS Compliant: Yes

Supplier's Site
N Channel Mosfet, 30V, 13.5A, Dfn5, Full Reel; Channel Type Onsemi - 57M9910 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 13.5A, Dfn5, Full Reel; Channel Type Onsemi
57M9910
N Channel Mosfet, 30V, 13.5A, Dfn5, Full Reel; Channel Type Onsemi 57M9910
N CHANNEL MOSFET, 30V, 13.5A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1VRoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 13.5A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1VRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number NTMFS4841NHT1GOSTR-ND 278-NTMFS4841NHT1G NTMFS4841NHT1G 060667-NTMFS4841NHT1G NTMFS4841NHT1G NTMFS4841NHT1G 50AC6497 57M9910
Product Name Single FETs, MOSFETs 30V 21.8A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4841NHT1G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 59A, Dfn; Transistor Polarity Onsemi N Channel Mosfet, 30V, 13.5A, Dfn5, Full Reel; Channel Type Onsemi
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
Package Type 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads SO-8; SOT3; 5-DFN (5x6) (8-SOFL) 8-PowerTDFN, 5 Leads TO-3 TO-3
PD 870 milliwatts 870 milliwatts 870 to 41700 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Transistor Technology / Material MOSFET (Metal Oxide)
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