N-Channel MOSFET, 30V, 191A, 2mΩ, DFN5 5x6 Product overview: NTMFS4833NT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 191A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 191A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS4833NT1G can be used for catalog matching and distributor lookup.
N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Manufacturer: ON Semiconductor
Win Source Part Number: 025802-NTMFS4833NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 156A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 88nC @ 11.5V
Max Input Capacitance: 5600pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
MOSFET N-CH 30V 16A/156A 5DFN
MOSFET N-CH 30V 16A/156A 5DFN
N CHANNEL MOSFET, 30V, 191A, DFN5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 191A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5VRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-NTMFS4833NT1G | NTMFS4833NT1GOSTR-ND | 025802-NTMFS4833NT1G | NTMFS4833NT1G | NTMFS4833NT1G | 09R9666 | NTMFS4833NT1G |
| Product Name | N-Channel 30V 191A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 125000 milliwatts | 910 to 125000 milliwatts | 910 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | 8-PowerTDFN, 5 Leads | SO-8; SOT3; 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | TO-3 |
