Manufacturer: ON Semiconductor
Win Source Part Number: 025802-NTMFS4833NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 156A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 88nC @ 11.5V
Max Input Capacitance: 5600pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial
N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET N-CH 30V 16A/156A 5DFN
MOSFET N-CH 30V 16A/156A 5DFN
N CHANNEL MOSFET, 30V, 191A, DFN5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes
N CHANNEL MOSFET, 30V, 191A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5VRoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 025802-NTMFS4833NT1G | NTMFS4833NT1GOSTR-ND | NTMFS4833NT1G | NTMFS4833NT1G | NTMFS4833NT1G | 09R9666 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||||
| PD | 910 to 125000 milliwatts | 910 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
