onsemi Single FETs, MOSFETs NTMFS4833NT1G

Description
MOSFET N-CH 30V 16A/156A 5DFN
Request a Quote Datasheet
Description
MOSFET N-CH 30V 16A/156A 5DFN
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - NTMFS4833NT1G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NTMFS4833NT1G
Single FETs, MOSFETs NTMFS4833NT1G
MOSFET N-CH 30V 16A/156A 5DFN

MOSFET N-CH 30V 16A/156A 5DFN

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G - 025802-NTMFS4833NT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G
025802-NTMFS4833NT1G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G 025802-NTMFS4833NT1G
Manufacturer: ON Semiconductor Win Source Part Number: 025802-NTMFS4833NT1G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 910mW (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 5-DFN (5x6) (8-SOFL) Dimension: 8-PowerTDFN, 5 Leads Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta), 156A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 88nC @ 11.5V Max Input Capacitance: 5600pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 025802-NTMFS4833NT1G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 5-DFN (5x6) (8-SOFL)
Dimension: 8-PowerTDFN, 5 Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 156A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 88nC @ 11.5V
Max Input Capacitance: 5600pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Computers & Computer Peripherals, Industrial

Buy Now Datasheet
Single FETs, MOSFETs - NTMFS4833NT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NTMFS4833NT1GOSTR-ND
Single FETs, MOSFETs NTMFS4833NT1GOSTR-ND
N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET NFET 30V 191A 2MOHM

MOSFET NFET 30V 191A 2MOHM

Buy Now Datasheet
N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi - 09R9666 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi
09R9666
N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi 09R9666
N CHANNEL MOSFET, 30V, 191A, DFN5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 191A, DFN5; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5V RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 30V, 191A, Dfn5, Full Reel; Channel Type Onsemi - 27M2752 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 30V, 191A, Dfn5, Full Reel; Channel Type Onsemi
27M2752
N Channel Mosfet, 30V, 191A, Dfn5, Full Reel; Channel Type Onsemi 27M2752
N CHANNEL MOSFET, 30V, 191A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5VRoHS Compliant: Yes

N CHANNEL MOSFET, 30V, 191A, DFN5, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:191A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.5VRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTMFS4833NT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTMFS4833NT1G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTMFS4833NT1G
MOSFET N-CH 30V 16A/156A 5DFN

MOSFET N-CH 30V 16A/156A 5DFN

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NTMFS4833NT1G 025802-NTMFS4833NT1G NTMFS4833NT1GOSTR-ND NTMFS4833NT1G 09R9666 NTMFS4833NT1G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4833NT1G Single FETs, MOSFETs MOSFET N Channel Mosfet, 30V, 191A, Dfn5; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 16000 milliamps 191000 milliamps
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