The N-Channel MOSFET NTMFS0D8N02P1E has a maximum drain-to-source voltage of 25V and can handle continuous drain currents of up to 365A at 25¬8C. It features a low on-resistance of 0.68 mOc at 10V gate voltage, which minimizes conduction losses. The device is housed in a compact DFN package measuring 5x6mm, making it suitable for space-constrained applications. It is RoHS compliant and free from halogens and lead, aligning with environmental standards. The MOSFET is designed for applications such as DC-DC converters, power load switches, and notebook battery management systems. Its thermal resistance is rated at 0.9¬8C/W junction-to-case, ensuring efficient heat dissipation during operation. The device also exhibits low gate charge and capacitance, which helps reduce driver losses.
N-Channel 25V 55A (Ta), 365A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 25V 55A (Ta), 365A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
N-Channel 25V 55A (Ta), 365A (Tc) 3.2W (Ta), 139W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
MOSFET, N-CH, 25V, 365A, DFN ROHS COMPLIANT: YES
MOSFET N-CH 25V 55A/365A 5DFN
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 488-NTMFS0D8N02P1ET1GTR-ND | 74AH4846 | NTMFS0D8N02P1ET1G |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 25V, 365A, Dfn Rohs Compliant Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
