The NTMFS0D55N03CGT1G is an N-channel MOSFET designed for power applications, featuring a maximum drain-to-source voltage of 30 V and a continuous drain current rating of 462 A at 25¬8C. It has an ultra-low on-resistance of 0.58 mOc at a gate voltage of 10 V and a drain current of 30 A, which enhances system efficiency. The device is housed in a compact 5x6 mm SO8-FL package, providing excellent thermal conduction and a wide safe operating area to manage inrush currents effectively. This MOSFET is suitable for various applications, including hot swap circuits, power load switches, and battery management systems. It operates over a temperature range of -55¬8C to +175¬8C and is compliant with RoHS standards, being both Pb-free and halogen-free. The device also features a maximum power dissipation of 199 W at 25¬8C and a low gate charge of 224.9 nC at 10 V, making it a reliable choice for high-performance applications.
Win Source Part Number: 1354103-NTMFS0D55N03
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
Mfr: onsemi
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs: 224.9 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 15 V
Power Dissipation (Max): 1.1W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
WIDE SOA Product overview: NTMFS0D55N03CGT1G from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NTMFS0D55N03CGT1
N-Channel 30V 35A (Ta) 1.1W (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
WIDE SOA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1354103-NTMFS0D55N03CGT1G | 278-NTMFS0D55N03CGT1G | 488-NTMFS0D55N03CGT1GTR-ND | NTMFS0D55N03CGT1G | NTMFS0D55N03CGT1G |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | SOT3 | Tape & Reel (TR) | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads | 8-PowerTDFN, 5 Leads |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 3900 milliwatts | 1100 milliwatts |
